Four-Period Vertically Stacked SiGe/Si Channel FinFET Fabrication and Its Electrical Characteristics
Li Y, Zhao F, Cheng X, Liu H, Zan Y, Li J, Zhang Q, Wu Z, Luo J, Wang W. Four-Period Vertically Stacked SiGe/Si Channel FinFET Fabrication and Its Electrical Characteristics. Nanomaterials (Basel).
Chelmsford, MA — Hittite Microwave Corporation, a supplier of complete MMIC based solutions for communication & military markets, announces two SiGe HBT Dual Channel Gain Block MMIC SMT amplifiers.
As transistor sizes shrink, short channel effects make it more difficult for transistor gates to turn a transistor ON and OFF [1]. One method to overcome this problem is to move away from planar ...
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