SiC is extensively used in microelectronic devices owing to its several unique properties. However, low yield and high cost of the SiC manufacturing process are the major challenges that must be ...

YOKOHAMA, JP / ACCESS Newswire / February 27, 2025 / TASMIT Inc. has launched a new inspection system for glass substrates as part of its INSPECTRA® series of semiconductor wafer visual inspection ...

Despite silicon carbide’s (SiC) promise over conventional silicon for the design of next-generation power electronics devices, broad adoption of this high-performance compound semiconductor has been ...

LONDON — Intrinsic Semiconductor has started production of initial lots of 100-mm SiC substrates and plans to migrate production of all its products — SiC wafers of both insulating and conducting ...

Silicon carbide (SiC) is a wide-bandgap semiconductor material utilized in high-power, high-temperature, and high-frequency electronic devices. 4H-SiC substrates have distinct characteristics, ...

Crystal defects can confine isolated electronic spins and are promising candidates for solid-state quantum information. Alongside research focusing on nitrogen-vacancy centres in diamond, an ...

As the world works to reduce greenhouse gas emissions, global adoption of electric vehicles (EVs) is driving an increased demand for high-power, energy-efficient compound semiconductors, such as ...

Silicon carbide devices are displacing their incumbent silicon counterparts in several high-volume power applications. As SiC market share continues to grow, the industry is lifting the last barriers ...

The system detects not only pattern defects and foreign particles but also cracks and other defects specific to glass substrates, and is compatible with glass core interposers and rewiring glass ...