Everspin’s PERSYST MRAM Validated for Configuration Across All Lattice Semiconductor FPGA Families CHANDLER, Ariz.--(BUSINESS WIRE)-- Everspin Technologies, Inc. (NASDAQ: MRAM), the world’s leading ...
Memory technology has evolved quickly in recent years, driven by the need to improve on traditional systems. One promising candidate, Magnetoresistive Random Access Memory (MRAM), is gaining attention ...
Osaka, Japan – Numerous memory types for computing devices have emerged in recent years, aiming to overcome the limitations imposed by traditional random access memory (RAM). Magnetoresistive RAM ...
New AEC-Q100 Grade 1 MRAM Delivers 10-Year Data Retention at 125°C, 48-Hour Burn-In, and Unlimited Endurance for Mission-Critical Systems CHANDLER, Ariz.--(BUSINESS WIRE)-- Everspin Technologies, Inc.
CHANDLER, Ariz.--(BUSINESS WIRE)--Everspin Technologies, Inc. (NASDAQ: MRAM), the world’s leading developer and manufacturer of Magnetoresistive Random Access Memory (MRAM) persistent memory solutions ...
(Nanowerk News) Long gone are the days where all our data could fit on a two-megabyte floppy disk. In today's information-based society, the increasing volume of information being handled demands that ...
A new technical paper titled “Comprehensive device to system co-design for SOT-MRAM at the 7nm node” was published by researchers at Georgia Institute of Technology and Intel. “This work presents a ...
Microcontrollers are available from a plethora of sources, featuring ever-more combinations of peripherals and memory. Occasionally, one comes along that stands out among the crowd. That’s the case ...
A new technical paper titled “SOT-MRAM Bitcell Scaling with BEOL Read Selectors: A DTCO Study” was published by researchers at imec, Leuven, and 3001 Belgium. “This work explores the cross-node ...
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