A new publication from Opto-Electronic Science; DOI 10.29026/oes.2023.230005 overviews how GaN-based LED achieves high rate Wavelength division multiplexing visible light communication system with ...
The adoption of wide-bandgap (WBG) power devices such as silicon carbide (SiC) MOSFETs and gallium nitride (GaN) HEMTs is now in full progress across a wide range of market segments. In many cases, ...
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