SAN JOSE, Calif. — Cree Inc. has officially opened its new 230,000-square-foot engineering and production facility in Research Triangle Park, N.C. The new facility is producing the company's ...
Cree has announced that its GaN HEMT microwave devices and epiwafer materials were successfully installed aboard the International Space Station (ISS), after being launched into space by the Space ...
DURHAM, N.C.--(BUSINESS WIRE)--Cree, Inc. (Nasdaq: CREE) announces the qualification and production release of two new GaN processes: G40V4, a 0.25µm process with operating drain voltage up to 40V, ...
Gallium-nitride power transistors occupy a unique performance niche. Here is why, along with five GaN devices to consider for your next design. 1. A graph from “Comparative Study of Optimally Designed ...
As the application market for third-generation semiconductors GaN and SiC devices is on track for rapid expansion, international IDMs including Cree, Infineon, SMT Microelectronics and Rohm ...
Suppliers of gallium nitride (GaN) and silicon carbide (SiC) power devices are rolling out the next wave of products with some new and impressive specs. But before these devices are incorporated in ...
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